• DocumentCode
    1043235
  • Title

    A Novel Depletion-IMOS (DIMOS) Device With Improved Reliability and Reduced Operating Voltage

  • Author

    Onal, Caner ; Woo, Raymond ; Koh, H. -Y Serene ; Griffin, Peter B. ; Plummer, James D.

  • Author_Institution
    Electr. Eng. Dept., Stanford Univ., Stanford, CA
  • Volume
    30
  • Issue
    1
  • fYear
    2009
  • Firstpage
    64
  • Lastpage
    67
  • Abstract
    We experimentally demonstrate a novel depletion-IMOS (DIMOS) device with a 12.1-mV/dec subthreshold slope and 5-decade ON/OFF ratio, employing a depletion mode of operation instead of inversion. DIMOS structure improves reliability by reducing hot carrier injection and features 40% lower breakdown voltages with higher ON currents compared to conventional IMOS.
  • Keywords
    MOSFET; circuit reliability; DIMOS device; MOSFET; ON-OFF ratio; breakdown voltage; carrier injection; novel depletion-IMOS device; operating voltage; Depletion mode; I-MOS; IMOS; depletion type; impact ionization; subthreshold slope (SS); subthreshold swing;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2008.2008029
  • Filename
    4721621
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1043235