DocumentCode
1043306
Title
Pulse investigation of switching delays in VO2 coplanar devices
Author
Adam, Georges B. ; Duchene, Jacques C.
Author_Institution
Centre d´´Etudes Nucléaires de Grenoble, Grenoble, France
Volume
19
Issue
6
fYear
1972
fDate
6/1/1972 12:00:00 AM
Firstpage
820
Lastpage
825
Abstract
The purpose of this paper is to show that switching delay times of a few microseconds can be obtained in VO2 coplanar threshold devices. The investigation of the influence of different parameters (pulse height and pulse width, pulse rate, ambient temperature) on the delay time and the recovery time underlines the features of the thermal switching phenomenon: decrease in the delay time when voltage and temperature increase, increase in the recovery time with overvoltage, and decrease in the maximum repetition rate with overvoltage. The experimental results are similar to those published on other threshold devices.
Keywords
Conductivity; Delay effects; Electrodes; Heating; Semiconductor thin films; Space vector pulse width modulation; Temperature dependence; Thin film devices; Threshold voltage; Voltage control;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1972.17499
Filename
1476970
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