Experimentally observed admittance properties of the semiconductor—Insulator—Semiconductor (SIS) diode

The admittance properties of a new type of semiconductor diode, the SIS (semiconductor-insulator-semiconductor) device, have been investigated experimentally. A fabrication technique is described which enables the necessary sandwich structure of two semiconductors (preferably single crystal), separated by a dielectric layer, to be obtained. The capacitance-voltage and conductance-voltage curves for a variety of SIS diodes are presented. The influence of surface states and oxide charge on the electrical characteristics is readily seen in the comparison of observed data with theoretical results for the corresponding ideal diodes. Addition of surface state, oxide charge, and other nonideal effects to the ideal SIS theory allows a good qualitative fit to be made to the experimentally observed data.