DocumentCode
1043930
Title
Small-signal admittance of BARITT diodes
Author
Matsumura, Masakiyo
Author_Institution
Nippon Electric Company, Ltd., Kawasaki, Japan
Volume
19
Issue
10
fYear
1972
fDate
10/1/1972 12:00:00 AM
Firstpage
1131
Lastpage
1133
Abstract
Small-signal admittance and phasor diagrams for metal-semiconductor-metal microwave oscillator diodes (BARITT diodes) were calculated by taking previously neglected carrier diffusion and field dependence of carrier velocity into account. It was shown that the microwave performance greatly degrades with an increase of dc current density and of oscillation frequency.
Keywords
Admittance; Circuits; Electrons; Frequency; Gunn devices; Logic devices; Microwave devices; Schottky diodes; Semiconductor diodes; Switches;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1972.17561
Filename
1477032
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