• DocumentCode
    1044250
  • Title

    Semiconductor current-flow equations (diffusion and degeneracy)

  • Author

    Stratton, Robert

  • Author_Institution
    Texas Instruments, Inc., Dallas, Tex.
  • Volume
    19
  • Issue
    12
  • fYear
    1972
  • fDate
    12/1/1972 12:00:00 AM
  • Firstpage
    1288
  • Lastpage
    1292
  • Abstract
    The correct form for the current-flow equation in semiconductors in the presence of density and temperature gradients, as well as electric fields, is derived from a perturbation solution of Boltzmann´s equation. The conditions under which the various widely used approximate forms of the current-flow equation are valid are clearly discussed. A new term that occurs if the relaxation time depends on position is derived, and is shown to be comparable in magnitude to the other terms in the current-flow equation.
  • Keywords
    Boundary conditions; Charge carrier processes; Distribution functions; Electric variables; Electron mobility; Helium; Instruments; Poisson equations; Semiconductor devices; Temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1972.17592
  • Filename
    1477063
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1044250