DocumentCode
1044562
Title
Delay time measurement in transition metal oxide glass devices
Author
Regan, Martin ; Drake, Cyril F.
Author_Institution
Standard Telecommunication Laboratories, Ltd., Harlow, Essex, England
Volume
20
Issue
2
fYear
1973
fDate
2/1/1973 12:00:00 AM
Firstpage
144
Lastpage
149
Abstract
The switching delay times for transition metal oxide glass devices vary from operation to operation. However, a statistical treatment of delay time measurements has revealed the voltage dependence of the delay times and the existence of a well-defined threshold voltage for all of the devices tested. The effect of the switch-OFF history on the performance of the devices has also been investigated. Measurements of the transition metal oxide devices are compared with similar work on chalcogenide devices.
Keywords
Circuits; Copper; Delay effects; Glass; History; Switches; Testing; Thin film devices; Threshold voltage; Time measurement;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1973.17621
Filename
1477278
Link To Document