• DocumentCode
    1044674
  • Title

    Threshold reduction of 1.3 mu m GaInAsP/InP surface emitting laser by a maskless circular planar buried heterostructure regrowth

  • Author

    Baba, Toshihiko ; Suzuki, Kenji ; Yogo, Y. ; Iga, Kenichi ; Koyama, Fumio

  • Author_Institution
    Precision & Intelligence Lab., Tokyo Inst. of Technol., Japan
  • Volume
    29
  • Issue
    4
  • fYear
    1993
  • Firstpage
    331
  • Lastpage
    332
  • Abstract
    A newly introduced maskless planar buried heterostructure regrowth has substantially improved the regrown heterointerface of a 1.3 mu m GaInAsP/InP circular buried heterostructure surface emitting laser. The threshold current of the 12 mu m phi device was reduced to 2.2 mA at 77 K under CW conditions.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; liquid phase epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor lasers; 1.3 micron; 2.2 mA; 77 K; CW conditions; GaInAsP-InP; heterostructure regrowth; maskless circular planar buried heterostructure; regrown heterointerface; surface emitting laser; threshold current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930224
  • Filename
    274770
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1044674