• DocumentCode
    1045310
  • Title

    A study of millimeter-wave GaAs IMPATT oscillator and amplifier noise

  • Author

    Weller, K.P.

  • Author_Institution
    RCA Laboratories, Princeton, N. J.
  • Volume
    20
  • Issue
    6
  • fYear
    1973
  • fDate
    6/1/1973 12:00:00 AM
  • Firstpage
    517
  • Lastpage
    521
  • Abstract
    Noise characterization of a set of epitaxially grown p-n-junction GaAs IMPATTS that operate efficiently from 26-35 GHz is reported. In oscillator operation, the diodes exhibit an excess noise near the carrier, which follows a 1/ f dependence. Far from the carrier an AM DSB SNR of 134 dB in a 100-Hz window and an FM noise measure of 36 dB are observed. As a reflection amplifier, a gain of 22 dB with a 250-MHz bandwidth and a noise figure of 25.5 dB is achieved. Under higher gain conditions (28-dB gain) a 24-dB figure is obtained.
  • Keywords
    Acoustic reflection; Circuit noise; Diodes; Energy measurement; Frequency measurement; Gallium arsenide; Noise figure; Noise measurement; Oscillators; Signal to noise ratio;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1973.17691
  • Filename
    1477348
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1045310