• DocumentCode
    1045360
  • Title

    Effect of strain on microwave noise characteristics in In0.52Al0.48As/InxGa1-xAs (0.53

  • Author

    Hong, Woo-Pyo ; Florez, L. ; Song, J.I.

  • Volume
    29
  • Issue
    15
  • fYear
    1993
  • fDate
    7/22/1993 12:00:00 AM
  • Firstpage
    1338
  • Lastpage
    1340
  • Abstract
    The RF noise characteristics of lattice-matched and strained In0.52Al0.48As/InxGa1-xAs HEMTs grown by MBE have been investigated. The indium composition of the InxGa1-xAs channel was varied from x=0.53 to 0.80. While the gain and speed performance were significantly improved with the increase of indium composition as expected, the noise characteristics showed that the microwave noise increases with the increase of the indium composition.
  • Keywords
    III-V semiconductors; aluminium compounds; deformation; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device noise; solid-state microwave devices; HEMTs; In composition; In 0.52Al 0.48As-In xGa 1-xAs; In xGa 1-xAs channel; MBE; RF noise characteristics; lattice-matched; microwave noise characteristics; strain;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930897
  • Filename
    274840
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1045360