• DocumentCode
    1045407
  • Title

    (Al0.5Ga0.5)0.65In0.35P/Ga0.65In0.35P double-heterostructure orange light-emitting diodes

  • Author

    Lin, Jen-Fin ; Wu, Meng-Chyi ; Chang, C.-M. ; Lee, B.-J.

  • Author_Institution
    Nat. Tsing Hua Univ., Hsinchu, Taiwan
  • Volume
    29
  • Issue
    15
  • fYear
    1993
  • fDate
    7/22/1993 12:00:00 AM
  • Firstpage
    1346
  • Lastpage
    1347
  • Abstract
    Visible light-emitting diodes (LEDs) emitting at 615 nm and employing the AlGaInP/GaInP double heterostructure (DH) grown on a lattice-matched GaAs0.7P0.3 substrate have been fabricated for the first. The external quantum efficiency of 0.156% for the orange LEDs can be achieved by introducing the GaP material as the current spreader and window layer for the DH LEDs.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; light emitting diodes; (Al 0.5Ga 0.5) 0.65In 0.35P-Ga 0.65In 0.35P; 615 nm; DH LEDs; GaAs 0.7P 0.3 substrate; current spreader; double-heterostructure; external quantum efficiency; orange light-emitting diodes; visible light LED;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930902
  • Filename
    274845
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1045407