• DocumentCode
    1045497
  • Title

    MOCVD-grown InAlAs/InGaAs HEMTs with fT=200 GHz

  • Author

    Hong, Woo-Pyo ; Lin, P.S.D. ; Caneau, Catherine ; Song, J.I.

  • Volume
    29
  • Issue
    15
  • fYear
    1993
  • fDate
    7/22/1993 12:00:00 AM
  • Firstpage
    1361
  • Lastpage
    1363
  • Abstract
    The performance of 0.15 mu m gate InAlAs/InGaAs HEMTs grown by MOCVD is reported. The HEMT layer structure exhibited excellent transport properties, indicating the high quality of the heterointerface. The devices fabricated using a T-gate process showed an fT of 200 GHz and fmax of 230 GHz extrapolated from 26 GHz at -6dB/octave. These are the best speed performances of any MOCVD-grown FETs. The results clearly demonstrate that MOCVD is a powerful growth technique for materials for high-speed applications.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium; semiconductor growth; solid-state microwave devices; vapour phase epitaxial growth; 0.15 micron; 200 GHz; 230 GHz; HEMT layer structure; InAlAs-InGaAs; MOCVD-grown; T-gate process; growth technique; heterointerface; high-speed applications; transport properties;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930912
  • Filename
    274854
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1045497