A Double-Power-MOSFET Circuit for Protection From Single Event Burnout

Author

Barak, Joseph ; Haran, Avner ; David, David ; Rapaport, Shimshon

Author_Institution

Soreq NRC, Yavne

Volume

55

Issue

6

fYear

2008

Firstpage

3467

Lastpage

3472

Abstract

Switching circuits, which use commercial off the shelf n-channel power MOSFETs, can be damaged by single event burnout (SEB). To prevent burnout events, we propose to replace the single power MOSFET in these circuits by two power MOSFETs connected in series and switched together. The power MOSFETs protect one another from SEB. Also, the voltage division between the transistors reduces (or eliminates) the occurrence of single event gate rupture (SEGR). The idea is demonstrated by two different circuits. The circuits were tested using heavy ions and alpha particles.

Keywords

MOSFET circuits; alpha-particle effects; field effect transistor switches; power MOSFET; radiation hardening (electronics); semiconductor device testing; alpha particle effect; double-power-MOSFET circuit; heavy ion effect; n-channel power MOSFET testing; single event burnout protection; single event gate rupture; switching circuit; transistor voltage division; Alpha particles; Circuit synthesis; Circuit testing; Helium; MOSFETs; Power supplies; Protection; Radiation hardening; Switching circuits; Voltage; Alpha particles; SEB; SEGR; hardening by circuit design; power MOSFET;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2008.2007486

Filename

4723754