DocumentCode
1046025
Title
Changes of the four noise parameters due to general changes of linear two-port circuits
Author
Hartmann, Karl ; Strutt, Max J.O.
Author_Institution
Swiss Federal Institute of Technology, Zurich, Switzerland
Volume
20
Issue
10
fYear
1973
fDate
10/1/1973 12:00:00 AM
Firstpage
874
Lastpage
877
Abstract
Transformation formulas for the four noise parameters are given as a function of the four scattering parameters. For example, the influence of the lead inductances of a microwave bipolar transistor is examined, showing new significant results. The described procedure is applicable to other semiconductor devices. Most of the general formulas in Section II are believed to be new.
Keywords
Admittance; Bipolar transistors; Circuit noise; Microwave devices; Noise figure; Scattering parameters; Semiconductor device noise; Semiconductor device packaging; Semiconductor devices; Stability;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1973.17761
Filename
1477418
Link To Document