DocumentCode
1046187
Title
Comparison of InGaAs transistors as optoelectronic mixers
Author
Urey, Z. ; Wake, D. ; Newson, D.J. ; Henning, I.D.
Author_Institution
BT Labs., Ipswich, UK
Volume
29
Issue
20
fYear
1993
Firstpage
1796
Lastpage
1797
Abstract
Optoelectronic mixing experiments with a range of different InGaAs transistor structures are reported. Results of measurements with both optically and electrically pumped devices show that heterojunction bipolar transistors offer the best performance in terms of the available signal/noise ratio, where values in excess of 30 dB have been obtained.
Keywords
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; high electron mobility transistors; indium compounds; junction gate field effect transistors; mixers (circuits); optoelectronic devices; solid-state microwave devices; 30 dB; HBT; HEMT; InGaAs transistors; JFET; SNR; electrically pumped devices; heterojunction bipolar transistors; optically pumped devices; optoelectronic mixers; signal/noise ratio;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19931195
Filename
274923
Link To Document