• DocumentCode
    1046900
  • Title

    Possible uses of charge-transfer devices and magnetic-domain devices in memory hierarchies

  • Author

    Anacker, Wilhelm

  • Author_Institution
    IBM Corporation, Yorktown Heights, N.Y.
  • Volume
    7
  • Issue
    3
  • fYear
    1971
  • fDate
    9/1/1971 12:00:00 AM
  • Firstpage
    410
  • Lastpage
    415
  • Abstract
    Characteristics of magnetic-domain device (MDD) and charge-transfer device (CTD) memory modules which appear technically feasible and desirable for use in computer applications are derived. The possible uses of these memories in the memory and storage subsystems of computers are discussed. The concept and measures of performance of memory hierarchies is outlined and possible improvements by incorporation of MDD and/or CTD memories in hierarchies employing conventional memories are addressed. A scheme comprising two hierarchy levels on the same chip is evaluated by using the derived performance measures.
  • Keywords
    Charge-transfer devices; Magnetic bubble devices; Magnetic domain devices; Magnetic memories; Memory hierarchies; Semiconductor memories; Character generation; Charge coupled devices; Circuits; Computer applications; Decoding; Electrodes; Magnetic devices; Magnetic domains; Semiconductor device measurement; Shift registers;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.1971.1067124
  • Filename
    1067124