DocumentCode
1046900
Title
Possible uses of charge-transfer devices and magnetic-domain devices in memory hierarchies
Author
Anacker, Wilhelm
Author_Institution
IBM Corporation, Yorktown Heights, N.Y.
Volume
7
Issue
3
fYear
1971
fDate
9/1/1971 12:00:00 AM
Firstpage
410
Lastpage
415
Abstract
Characteristics of magnetic-domain device (MDD) and charge-transfer device (CTD) memory modules which appear technically feasible and desirable for use in computer applications are derived. The possible uses of these memories in the memory and storage subsystems of computers are discussed. The concept and measures of performance of memory hierarchies is outlined and possible improvements by incorporation of MDD and/or CTD memories in hierarchies employing conventional memories are addressed. A scheme comprising two hierarchy levels on the same chip is evaluated by using the derived performance measures.
Keywords
Charge-transfer devices; Magnetic bubble devices; Magnetic domain devices; Magnetic memories; Memory hierarchies; Semiconductor memories; Character generation; Charge coupled devices; Circuits; Computer applications; Decoding; Electrodes; Magnetic devices; Magnetic domains; Semiconductor device measurement; Shift registers;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.1971.1067124
Filename
1067124
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