DocumentCode
1046925
Title
Electron and hole impact ionization rates in GaAs
Author
Stillman, G.E. ; Wolfe, C.M. ; Rossi, J.A. ; Foyt, A.G.
Volume
20
Issue
12
fYear
1973
fDate
12/1/1973 12:00:00 AM
Firstpage
1177
Lastpage
1178
Keywords
Avalanche photodiodes; Charge carrier processes; Doping profiles; Force measurement; Gallium arsenide; Gold; Impact ionization; Schottky barriers; Schottky diodes; Superconducting device noise;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1973.17845
Filename
1477502
Link To Document