DocumentCode
1046958
Title
Comparison of nonlinear MESFET models for wideband circuit design
Author
Tellez, Rodriguez ; Al-Daas, M. ; Mezher, K.A.
Author_Institution
Dept. of Electr. & Electron. Eng., Bradford Univ., UK
Volume
41
Issue
3
fYear
1994
fDate
3/1/1994 12:00:00 AM
Firstpage
288
Lastpage
293
Abstract
The Curtice quadratic, Materka, Statz, and Rodriguez nonlinear models are compared from DC, CV, and RF points of view, to determine which is the most suitable for nonlinear wideband circuit design. For this comparison, GaAs MESFETs of various sizes are employed. These include devices of varying gate widths, gate lengths, number of fingers, and pinch-off voltages
Keywords
III-V semiconductors; Schottky gate field effect transistors; equivalent circuits; gallium arsenide; semiconductor device models; DC comparison; GaAs; MESFET models; RF comparison; gate length; gate width; nonlinear models; pinchoff voltages; quadratic model; wideband circuit design; Capacitance; Circuit synthesis; Computational modeling; Fingers; Gallium arsenide; MESFET circuits; Predictive models; Radio frequency; Voltage; Wideband;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.275211
Filename
275211
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