DocumentCode
1047051
Title
Effects of surface pretreatment of polysilicon electrode prior to Si3N4 deposition on the electrical characteristics of Si3N4 dielectric films
Author
Yoon, G.W. ; Joshi, A.B. ; Kwong, D.L. ; Mathews, V.K. ; Thakur, R.P.S. ; Fazan, P.C.
Author_Institution
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
Volume
41
Issue
3
fYear
1994
fDate
3/1/1994 12:00:00 AM
Firstpage
347
Lastpage
351
Abstract
Effects of various surface pretreatments of polysilicon electrode prior to Si3N4 deposition on leakage current, time-dependent dielectric breakdown (TDDB) and charge trapping characteristics of thin Si3N4 films deposited on rugged and smooth poly-Si are investigated. Surface pretreatments consist of different combinations of HF clean, rapid thermal H2 -Ar clean, and rapid thermal NH3-nitridation (RTN) and are intended to modify the surface of bottom poly-Si electrode. Results show that RTN treatments lead to lower leakage current, reduced charge trapping, and superior TDDB characteristics as compared to rapid thermal H2-Ar clean
Keywords
CVD coatings; dielectric thin films; electric breakdown of solids; electron traps; integrated circuit technology; leakage currents; metal-insulator-semiconductor devices; nitridation; rapid thermal processing; semiconductor-insulator boundaries; silicon compounds; surface treatment; H2-Ar; HF; HF clean; RTN; Si; Si-SiO2-Si3N4; Si3N4 deposition; Si3N4 dielectric films; charge trapping characteristics; electrical characteristics; leakage current; poly-Si; polysilicon electrode; rapid thermal H2-Ar clean; rapid thermal NH3-nitridation; surface pretreatment; time-dependent dielectric breakdown; Capacitors; Electric variables; Electrodes; Hafnium; Leakage current; Rapid thermal processing; Semiconductor films; Surface cleaning; Surface morphology; Surface treatment;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.275219
Filename
275219
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