Physical background of substrate current characteristics and hot-carrier immunity in short-channel ultrathin-film MOSFET´s/SIMOX

Author

Omura, Yasuhisa ; Izumi, Katsutoshi

Author_Institution

NTT LSI Labs., Atsugi, Japan

Volume

41

Issue

3

fYear

1994

fDate

3/1/1994 12:00:00 AM

Firstpage

352

Lastpage

358

Abstract

We show experimentally that, in contrast to past simulation results, I_SUB(max/)I_D decreases with decreasing silicon layer thickness. This is supported by two-dimensional numerical simulation results: the above phenomenon results from the nonlocal effect and the slightly gate-overlapped LDD structure. We also show that the velocity overshoot effect can suppress I_SUB(max/)I_D in short-channel MOSFET/SIMOX. It is demonstrated that 0.1-μm-gate ultrathin-film nMOSFET/SIMOX will have a 10-year lifetime at the supply voltage of 1.6 V, although an abnormal degradation is indicated in such an extremely short-channel SOI device

Keywords

SIMOX; hot carriers; insulated gate field effect transistors; semiconductor device models; simulation; thin film transistors; 0.1 micron; 1.6 V; 10 year; 2D simulation; SIMOX; Si; gate-overlapped LDD structure; hot-carrier immunity; nonlocal effect; short-channel SOI device; substrate current characteristics; two-dimensional numerical simulation; ultrathin-film MOSFET; velocity overshoot effect; Character recognition; Degradation; Doping; Hot carriers; Immune system; MOS devices; MOSFET circuits; Numerical simulation; Silicon; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.275220

Filename

275220