• DocumentCode
    1047362
  • Title

    Electron injection into SiO2in the N channel stacked gate MOS tetrode

  • Author

    Pepper, M.

  • Volume
    21
  • Issue
    2
  • fYear
    1974
  • fDate
    2/1/1974 12:00:00 AM
  • Firstpage
    174
  • Lastpage
    175
  • Abstract
    Using a simple model an expression has been derived relating the oxide current to the offset gate voltage in the stacked gate MOS tetrode.
  • Keywords
    Amorphous materials; Electron mobility; Hall effect; Impact ionization; Phonons; Potential well; Scattering; Tellurium; Temperature; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1974.17889
  • Filename
    1477704
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1047362