DocumentCode
1048187
Title
Voltage-controlled DNR in unijunction transistor structure
Author
Mimura, T.
Volume
21
Issue
9
fYear
1974
fDate
9/1/1974 12:00:00 AM
Firstpage
604
Lastpage
605
Abstract
Modified structure of a conventional diffused planar unijunction transistor (UJT) having a feasible voltage-controlled differential negative resistance (DNR) characteristic is developed using high-resistivity n-type silicon. The origin of a voltage-controlled DNR is qualitatively explained. A quantitative analysis is given and a comparison with experimental results is made.
Keywords
Charge carrier density; Charge carrier processes; Circuits; Digital video broadcasting; Electron emission; Electron mobility; Fusion power generation; Josephson junctions; Superconductivity; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1974.17973
Filename
1477788
Link To Document