Wavelength-independent output power from an injection-tunable DBR laser

Author

Staring, A.A.M. ; Binsma, J.J.M. ; Kuindersma, P.I. ; Jansen, E.J. ; Thijs, P.J.A. ; Van Dongen, T. ; Depovere, G.F.G.

Author_Institution

Philips Optoelectron. Centre, Eindhoven, Netherlands

Volume

6

Issue

2

fYear

1994

Firstpage

147

Lastpage

149

Abstract

Injection-tunable three-section distributed Bragg reflector lasers emitting near 1.55 μm have been fabricated employing bulk 1.48-μm-bandgap InGaAsP in the tuning layer of the phase and Bragg sections. The gain in this material compensates for the increased absorption loss during tuning, which results in a nearly wavelength-independent optical output power. The maximum obtained output power is 28 mW ex facet, with a spectral linewidth around 5 MHz.

Keywords

III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser tuning; optical losses; semiconductor lasers; 1.48 micron; 1.55 micron; 28 mW; Bragg sections; InGaAsP; absorption loss; bulk 1.48-/spl mu/m-bandgap InGaAsP; gain; injection-tunable DBR laser; nearly wavelength-independent optical output power; phase section; spectral linewidth; three-section distributed Bragg reflector lasers; tuning layer; wavelength-independent output power; Absorption; Distributed Bragg reflectors; Laser tuning; Optical noise; Optical refraction; Optical tuning; Optical variables control; Power generation; Power lasers; Stimulated emission;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.275411

Filename

275411