1.55 /spl mu/m polarisation independent semiconductor optical amplifier with 25 dB fiber to fiber gain

Author

Doussiere, P. ; Garabedian, P. ; Graver, C. ; Bonnevie, D. ; Fillion, T. ; Derouin, E. ; Monnot, M. ; Provost, J.G. ; Leclerc, D. ; Klenk, M.

Author_Institution

Photonic Component Dept., Alcatel Alsthom Recherche, Marcoussis, France

Volume

6

Issue

2

fYear

1994

Firstpage

170

Lastpage

172

Abstract

Using a tapered in width square active waveguide and bulk InGaAsP/InP material we demonstrate a polarisation independent amplifier structure operating at 1550 nm with a reduced far-field divergence. Improvement of coupling efficiency enables us to achieve a 25 dB fiber to fiber gain together with 9 dBm fiber saturation output power for 150 mA bias current. A 200 ps gain recovery time allows fast gating or wavelength conversion.<>

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser transitions; optical communication equipment; optical couplers; optical fibres; optical saturation; optical waveguides; semiconductor lasers; 1.55 micron; 150 mA; 200 ps; 25 dB; InGaAsP-InP; bias current; bulk InGaAsP/InP material; coupling efficiency; fast gating; fiber saturation output power; fiber to fiber gain; gain recovery time; polarisation independent semiconductor optical amplifier; reduced far-field divergence; tapered in width square active waveguide; wavelength conversion; Indium phosphide; Optical amplifiers; Optical fiber polarization; Optical materials; Optical polarization; Optical waveguides; Power generation; Semiconductor materials; Semiconductor optical amplifiers; Semiconductor waveguides;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.275418

Filename

275418