100-nm IGZO Thin-Film Transistors With Film Profile Engineering

Author

Horng-Chih Lin ; Bo-Shiuan Shie ; Tiao-Yuan Huang

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

61

Issue

6

fYear

2014

fDate

Jun-14

Firstpage

2224

Lastpage

2227

Abstract

100-nm indium-gallium-zinc-oxide (IGZO) thin-film transistors were fabricated with a one-mask process, which takes the advantage of photoresist trimming technique and the concept of film profile engineering (FPE). With I-line-based photolithography, a device with channel length of 97 nm has been successfully fabricated. The FPE device contains a conformal Al₂O₃ gate oxide, concave IGZO channel, and discrete source/drain (S/D) Al contacts. Good device characteristics including a high-ON/OFF current ratio (>10⁷) and good subthreshold swing (140 mV/decade) are obtained. Nonetheless, high-S/D series resistance presents a key issue that needs to be addressed for further device performance improvement.

Keywords

aluminium; electrical contacts; gallium compounds; indium compounds; masks; photoresists; thin film transistors; Al; Al₂O₃; FPE device; I-line-based photolithography; IGZO thin-film transistors; InGaZnO; concave IGZO channel; discrete source-drain Al contacts; film profile engineering; gate oxide; indium gallium zinc oxide; one-mask process; photoresist trimming; size 100 nm; subthreshold swing; Educational institutions; Fabrication; Logic gates; Thin film transistors; Zinc oxide; Film profile engineering (FPE); indium-gallium-zinc-oxide (IGZO); indium??gallium??zinc-oxide (IGZO); metal oxide; photoresist (PR) trimming; thin-film transistors (TFTs); thin-film transistors (TFTs).;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2014.2318703

Filename

6809982