Effect of annealing on photorefractive damage in titanium-indiffused LiNbO/sub 3/ modulators

Author

Betts, G.E. ; Donnell, F. J O ; Ray, K.G.

Author_Institution

Lincoln Lab., MIT, Lexington, MA, USA

Volume

6

Issue

2

fYear

1994

Firstpage

211

Lastpage

213

Abstract

We have evaluated photorefractive effects at 1320-nm and 1064-nm optical wavelengths in interferometric modulators built using Ti-indiffused waveguides in lithium niobate. The sensitivity to photorefractive damage is substantially increased by anneals in non-oxygen atmospheres at temperatures /spl ges/200/spl deg/C. The sensitivity can be reduced by an anneal in oxygen. Properly annealed modulators operated for 150 h with 400 mW at 1320 nm with no photorefractive effects other than a 3/spl deg/ change in bias point.<>

Keywords

annealing; diffusion in solids; electro-optical devices; light interferometers; lithium compounds; optical waveguides; photorefractive effect; sensitivity; titanium; 1064 nm; 1320 nm; 150 h; 400 mW; LiNbO/sub 3/:Ti; Ti-indiffused LiNbO/sub 3/ modulators; Ti-indiffused waveguides; annealed modulators; annealing; anneals; bias point; electrooptical modulators; interferometric modulators; non-oxygen atmospheres; photorefractive damage; photorefractive effects; sensitivity; Annealing; Atmosphere; Atmospheric waves; Interferometric lithography; Lithium niobate; Optical interferometry; Optical modulation; Optical sensors; Optical waveguides; Photorefractive effect;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.275431

Filename

275431