DocumentCode
1049056
Title
Spectral linewidth rebroadening in MQW-DFB LDs caused by spontaneous emission noise in SCH/barrier layers
Author
Yamazaki, H. ; Yamaguchi, M. ; Kitamura, M.
Author_Institution
Opto-Electron. Res. Labs., NEC Corp., Tsukuba, Japan
Volume
6
Issue
3
fYear
1994
fDate
3/1/1994 12:00:00 AM
Firstpage
341
Lastpage
343
Abstract
A new theory is proposed to explain spectral linewidth rebroadening in MQW-DFB LDs. This is based on the idea that spontaneous emission recombination in the SCH and barrier layers may cause excess spectral linewidth broadening. Theoretical and experimental studies show that excess spectral linewidth broadening is proportional to the recombination current in the SCH/barrier layers. This current increases monotonically as output power increases.<>
Keywords
distributed feedback lasers; electron-hole recombination; laser theory; semiconductor device noise; semiconductor lasers; spectral line breadth; MQW-DFB LDs; SCH layers; SCH/barrier layers; barrier layers; output power; recombination current; spectral linewidth rebroadening; spontaneous emission; spontaneous emission recombination; Acoustical engineering; Diode lasers; Distributed feedback devices; Electron optics; Frequency response; Gratings; Power generation; Quantum well devices; Radiative recombination; Spontaneous emission;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.275483
Filename
275483
Link To Document