• DocumentCode
    1049143
  • Title

    Transient temperature rise in silicon semiconductor devices

  • Author

    Domingos, Henry

  • Author_Institution
    Clarkson College of Technology, Potsdam, N. Y.
  • Volume
    22
  • Issue
    1
  • fYear
    1975
  • fDate
    1/1/1975 12:00:00 AM
  • Firstpage
    20
  • Lastpage
    22
  • Abstract
    The temperature rise in silicon devices under pulsed power conditions is calculated by a numerical method which takes into account the nonlinear properties of the materials. Power is assumed to be dissipated in a thin but finite layer at the surface of a one-dimensional structure. The effect of various types of heat sinks on the peak temperature rise is shown.
  • Keywords
    Equations; Finite difference methods; Resistance heating; Semiconductor devices; Silicon; Space heating; Space technology; Temperature distribution; Thermal conductivity; Thermal resistance;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1975.18065
  • Filename
    1477900
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1049143