DocumentCode
10495
Title
Improvement of Resistive Switching Uniformity for Al–Zn–Sn–O-Based Memory Device With Inserting HfO2 Layer
Author
Po-Tsun Liu ; Yang-Shun Fan ; Chun-Ching Chen
Author_Institution
Dept. of PhotonicsInstitute of Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume
35
Issue
12
fYear
2014
fDate
Dec. 2014
Firstpage
1233
Lastpage
1235
Abstract
This letter demonstrates the characteristics of a resistive switching memory [resistive random access memory (RRAM)] device with a bilayer structure of aluminum-zinc-tin-oxide (AZTO) and HfO2-film layers. As for the RRAM operation, the formation and rupture processes of the conductive filaments can be confined in the HfO2 layer with low-concentration oxygen vacancy. The resistive switching stability and electrical uniformity of bilayer AZTO/HfO2 RRAM device are obviously enhanced as compared with the one only with a single layer of AZTO film. In addition, a physical mechanism for uniformity improvement is proposed by the localized conduction of conducting filaments.
Keywords
aluminium; hafnium compounds; random-access storage; semiconductor storage; zinc compounds; AlSnO:Al-HfO2; RRAM; bilayer structure; conducting filament; resistive random access memory device; resistive switching memory; resistive switching uniformity; Aluminum compounds; Amorphous semiconductors; Hafnium compounds; Nonvolatile memory; Random access memory; Resistance; AZTO; RRAM; Resistive switching; localized conducting filament; localized conducting filament.;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2014.2363491
Filename
6936282
Link To Document