DocumentCode
1049714
Title
Charge-coupled structures with self-aligned submicron gaps
Author
Haken, Roger A. ; Beynon, John D E ; Baker, Ian M. ; Roberts, Peter C T
Author_Institution
University of Southampton, Southampton, England
Volume
22
Issue
5
fYear
1975
fDate
5/1/1975 12:00:00 AM
Firstpage
289
Lastpage
293
Abstract
A technique for fabricating charge-coupled devices with submicron gaps is described. The method relies on a "shadowing" effect produced by oblique deposition of the metal in an otherwise standard vacuum evaporation process. The biggest advantage of the technique is its extreme simplicity, particularly for one-dimensional CCD structures. The feasibility of the technique has been demonstrated for two-and three-phase devices; the two-phase structure was a 32-bit shift register which has been operated at up to 10 MHz. With some additional processing, the technique can be used to make bidirectional CCD arrays as required in area imagers and serpentine shift registers.
Keywords
Aluminum; Charge coupled devices; Electrodes; Etching; Fabrication; Metallization; Shadow mapping; Shift registers; Silicon; Temperature;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1975.18120
Filename
1477955
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