Radio-frequency transmission properties of carbon nanotubes in a field-effect transistor configuration

Author

Zhang, Min ; Huo, Xiao ; Chan, Philip C.H. ; Liang, Qi ; Tang, Z.K.

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon

Volume

27

Issue

8

fYear

2006

Firstpage

668

Lastpage

670

Abstract

In this letter, the radio-frequency (RF) transmission properties of single-walled carbon nanotubes (CNTs) have been characterized up to the frequency of 12 GHz in a carbon nanotube field-effect transistor (CNFET) configuration using a two-port S-parameter method for the first time. The RF characteristics of the CNTs were measured from the drain to the source of the CNFET. A resistance, inductance, and capacitance model has been proposed, and the element values have been extracted. Without the effect of the parasitics, the RF signal transmission in the CNTs presents no degeneration even at 12 GHz. The capacitive contact between CNTs and metal electrodes is reported

Keywords

capacitance; carbon nanotubes; electric resistance; field effect transistors; inductance; semiconductor device models; 12 GHz; RF signal transmission; capacitance model; carbon nanotubes field effect transistor configuration; inductance model; radiofrequency transmission properties; resistance model; single-walled carbon nanotubes; CNTFETs; Carbon nanotubes; Chemical elements; Electrical resistance measurement; Electrodes; FETs; Inductance; Parasitic capacitance; Radio frequency; Scattering parameters; Carbon nanotube (CNT); radio frequency (RF); transmission;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2006.878045

Filename

1661725