DocumentCode
1050697
Title
Analysis of Power-Cycling Capability of IGBT Modules in a Conventional Matrix Converter
Author
Wei, Lixiang ; Lukaszewski, Richard A. ; Lipo, Thomas A.
Author_Institution
Rockwell Autom.-Allen Bradley, Mequon, WI, USA
Volume
45
Issue
4
fYear
2009
Firstpage
1443
Lastpage
1451
Abstract
This paper analyzes the power-cycling capability of insulated-gate bipolar transistor (IGBT) modules in a conventional matrix converter used as a motor drive. The analysis is made under various conditions for this topology, including low-speed-operation capability, high-speed thermal- and power-cycling capabilities, etc. It was found that the power-cycling mean time to failure of IGBT in a matrix converter is low when the input and output frequencies are close to each other or when the output frequency of the converter is low. As a result, the chip size of the conventional matrix converter may be larger than the other candidates. In the end of this paper, some guidance for designing a matrix converter for long-term reliabilities is also discussed.
Keywords
failure analysis; insulated gate bipolar transistors; matrix convertors; power semiconductor devices; IGBT module; conventional matrix converter; high speed thermal capability; insulated gate bipolar transistor; low speed operation; mean time to failure; power cycling capability; Conventional matrix converter; mean time to failure (MTTF); power cycle; thermal cycle;
fLanguage
English
Journal_Title
Industry Applications, IEEE Transactions on
Publisher
ieee
ISSN
0093-9994
Type
jour
DOI
10.1109/TIA.2009.2023556
Filename
5061536
Link To Document