• DocumentCode
    1050697
  • Title

    Analysis of Power-Cycling Capability of IGBT Modules in a Conventional Matrix Converter

  • Author

    Wei, Lixiang ; Lukaszewski, Richard A. ; Lipo, Thomas A.

  • Author_Institution
    Rockwell Autom.-Allen Bradley, Mequon, WI, USA
  • Volume
    45
  • Issue
    4
  • fYear
    2009
  • Firstpage
    1443
  • Lastpage
    1451
  • Abstract
    This paper analyzes the power-cycling capability of insulated-gate bipolar transistor (IGBT) modules in a conventional matrix converter used as a motor drive. The analysis is made under various conditions for this topology, including low-speed-operation capability, high-speed thermal- and power-cycling capabilities, etc. It was found that the power-cycling mean time to failure of IGBT in a matrix converter is low when the input and output frequencies are close to each other or when the output frequency of the converter is low. As a result, the chip size of the conventional matrix converter may be larger than the other candidates. In the end of this paper, some guidance for designing a matrix converter for long-term reliabilities is also discussed.
  • Keywords
    failure analysis; insulated gate bipolar transistors; matrix convertors; power semiconductor devices; IGBT module; conventional matrix converter; high speed thermal capability; insulated gate bipolar transistor; low speed operation; mean time to failure; power cycling capability; Conventional matrix converter; mean time to failure (MTTF); power cycle; thermal cycle;
  • fLanguage
    English
  • Journal_Title
    Industry Applications, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0093-9994
  • Type

    jour

  • DOI
    10.1109/TIA.2009.2023556
  • Filename
    5061536