• DocumentCode
    1050907
  • Title

    High frequency performance of Si1-xGex/Si1-yGey/Si1-xGex HBTs

  • Author

    Rosenfeld, D. ; Alterovitz, S.A.

  • Author_Institution
    NASA-Lewis Res. Center, Cleveland, OH, USA
  • Volume
    29
  • Issue
    3
  • fYear
    1993
  • Firstpage
    260
  • Lastpage
    261
  • Abstract
    The results of a theoretical study of the performance of high speed SiGe HBTs is presented. The study includes a group of SiGe HBTs in which the Ge concentration in the base is 20% higher than that in the emitter and collector (i.e. y=x+0.2). It is shown that the composition dependences of fT and the Fmax are non-monotonic. As the Ge composition in the emitter and collector layers is increased, fT and fmax first decrease, then remain constant and finally increase to attain their highest values.
  • Keywords
    Ge-Si alloys; heterojunction bipolar transistors; solid-state microwave devices; F max; Ge concentration; HBTs; HF performance; Si 1-xGe x-Si 1-yGe y; composition dependences; cutoff frequency; f T; maximum frequency of oscillation; theoretical study;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930178
  • Filename
    277158
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1050907