DocumentCode
1051209
Title
MOVPE growth of long wavelength AlGaAsSb/InP Bragg mirrors
Author
Ostinelli, O. ; Almuneau, G. ; Ebnöther, M. ; Gini, E. ; Haiml, M. ; Bächtold, W.
Author_Institution
Dept. for Inf. Technol. & Electr. Eng., Swiss Fed. Inst. of Technol., Zurich, Switzerland
Volume
40
Issue
15
fYear
2004
fDate
7/22/2004 12:00:00 AM
Firstpage
940
Lastpage
942
Abstract
Monolithic distributed Bragg reflectors (DBRs) consisting of AlGaAsSb/InP quarter-wave multilayer were grown by metal-organic vapour-phase epitaxy (MOVPE) on InP substrates. The quality of antimonide MOVPE grown material has been optimised to achieve highly reflective, defect-free, DBR stacks. With 21 AlGaAsSb/InP periods, reflectivity up to 97% at 1.59 μm was measured.
Keywords
III-V semiconductors; MOCVD; aluminium compounds; distributed Bragg reflectors; gallium arsenide; indium compounds; optical fabrication; optical multilayers; reflectivity; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; 1.59 micron; AlGaAsSb-InP; DBR stacks; MOVPE growth; long wavelength Bragg mirrors; metal organic vapour phase epitaxy growth; monolithic distributed Bragg reflectors; quarter wave multilayer;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20045373
Filename
1318881
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