• DocumentCode
    1051233
  • Title

    Electron and hole drift velocity measurements in silicon and their empirical relation to electric field and temperature

  • Author

    Canali, C. ; Majni, G. ; Minder, R. ; Ottaviani, G.

  • Author_Institution
    Istituto di Fisica dell´´Università, Via Università, Modena, Italy
  • Volume
    22
  • Issue
    11
  • fYear
    1975
  • fDate
    11/1/1975 12:00:00 AM
  • Firstpage
    1045
  • Lastpage
    1047
  • Abstract
    The drift velocity of electrons and holes in silicon has been measured in a large range of the electric fields (from 3 . 102to 6 . 104V/cm) at temperatures up to 430 K. The experimental data have been fitted with a simple formula for the temperatures of interest. The mean square deviation was in all cases less than 3.8 percent. A more general formula has also been derived which allows to obtain by extrapolation drift velocity data at any temperature and electric field.
  • Keywords
    Charge carrier processes; Electric variables measurement; Electron mobility; Fingers; Irrigation; Performance evaluation; Silicon; Temperature distribution; Time measurement; Velocity measurement;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1975.18267
  • Filename
    1478102
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1051233