• DocumentCode
    1051885
  • Title

    Experimental verification of operation of the indium-doped infrared-sensing MOSFET

  • Author

    Forbes, L. ; Wittmer, L.L.

  • Author_Institution
    University of Arkansas, Fayetteville, Ark.
  • Volume
    22
  • Issue
    12
  • fYear
    1975
  • fDate
    12/1/1975 12:00:00 AM
  • Firstpage
    1100
  • Lastpage
    1101
  • Abstract
    Verification demonstrating operation of the indium-doped silicon infrared-sensing MOSFET (IRFET) is provided. This is a new type of detector for the 3-5-µm infrared wavelength regions, and the detector has been found to operate according to the original design proposal and criteria.
  • Keywords
    Boron; Conductivity; Gold; Impurities; Indium; Infrared detectors; Infrared spectra; MOSFET circuits; Silicon; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1975.18333
  • Filename
    1478168
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1051885