Static and Dynamic TCAD Analysis of IMOS Performance: From the Single Device to the Circuit

Author

Mayer, Frédéric ; Le Royer, Cyrille ; Le Carval, Gilles ; Clavelier, Laurent ; Deleonibus, Simon

Author_Institution

(LETI) CEA/GRE, Grenoble

Volume

53

Issue

8

fYear

2006

Firstpage

1852

Lastpage

1857

Abstract

Impact ionization MOSFET (IMOS) is a device that enables to reach subthreshold slopes as small as 5 mV/dec. This device has an asymmetric doping profile, and only a fraction of the channel is covered by the gate. In the first part of this paper, the purpose is to investigate the impact of some geometrical parameters on the IMOS performance: the gate length, the intrinsic length, and the Si film thickness. This study simulates a p-IMOS device on silicon-on-insulator using ATLAS. It is pointed out that the increase of the ratio L_G/L_IN allows a drop of the bias voltage, but involves a degradation of the subthreshold slope. A thin Si film improves the overall device performance. In the second part, the performance of an IMOS-based inverter is investigated, and for the first time an IMOS ring oscillator is simulated

Keywords

MOSFET; doping profiles; impact ionisation; semiconductor thin films; silicon-on-insulator; technology CAD (electronics); thin film transistors; ATLAS; IMOS performance; IMOS ring oscillator; IMOS-based inverter; TCAD analysis; asymmetric doping; geometrical parameter; impact ionization MOSFET; p-IMOS device; silicon-on-insulator; subthreshold slope; thin Si film; Degradation; Doping profiles; Impact ionization; Inverters; MOSFET circuits; Performance analysis; Ring oscillators; Semiconductor films; Silicon on insulator technology; Voltage; Impact ionization MOSFET (IMOS); Si film thickness; influence of geometrical parameters; inverter; ring oscillator; silicon-on-insulator (SOI); subthreshold slope;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2006.877372

Filename

1661887