Gunn-effect logic device using transverse extension of a high field domain

An E-shaped Gunn-effect device is proposed as a high-speed logic gate. It is composed of two Gunn diodes connected by a gate section which is located between the two diodes adjacent to the common cathode. Along the gate edge, an ohmic electrode is established to control the electric field at the gate section. It is fabricated into monolithic circuitry of GaAs, and its performance is found to be in good agreement with the result of a computer simulation. From this, it is concluded that the transverse extension of a high field domain can be controlled by changing a potential on the ohmic gate, which allows this device to be employed as a binary logic gate performing Z = X + Y.∼W (X, Y, W: binary inputs). The delay time of about 50 ps has been obtained with the gate width of 100 µm. For the convenience of designing a smaller device in order to reduce the delay time, a result of small signal analysis on the two-dimensional domain initiation is given. Also referred to is an H-shaped Gunn device which is profitable if considerable delay is required in performing the above-mentioned logic operation.