Feasibility Study of Semifloating Gate Transistor Gamma-Ray Dosimeter

Author

Ying Wang ; Zhi-Qiang Xiang ; Hai-Fan Hu ; Fei Cao

Author_Institution

Coll. of Inf. & Commun. Eng., Harbin Eng. Univ., Harbin, China

Volume

36

Issue

2

fYear

2015

fDate

Feb. 2015

Firstpage

99

Lastpage

101

Abstract

The feasibility study of semifloating gate (SFG) transistor dosimeter consisting a large area p-i-n diode between floating gate and drain region is described. No bias is applied during irradiation. The SFG is charged via the diode when exposed to gamma rays, and reset with the diode positively biased. A comprehensive device simulation that includes the mechanism of charge collection, the operation of device´s threshold voltage (Vth) reading, and the effect of diode dark current have been carried out with sentaurus TCAD. As a result, high linear dependence of the Vth on the absorbed dose of ionizing radiation is observed with a sensitivity of 65.8 mV/Gy, which suggests that this device could be used as a sensitive gamma-ray dosimeter.

Keywords

MOSFET; dosimeters; gamma-ray absorption; ionisation; p-i-n diodes; technology CAD (electronics); MOSFET; SFG transistor dosimeter; charge collection; dark current; drain region; ionizing radiation dose absorption; p-i-n diode; semifloating gate transistor gamma-ray dosimeter; sentaurus TCAD; Dark current; Gamma-rays; Logic gates; PIN photodiodes; Sensitivity; Threshold voltage; Transistors; Semi-floating gate; diode; dosimetry; gamma rays; simulation;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2014.2379674

Filename

6994797