DocumentCode
1054107
Title
Investigation of High-Voltage MOSFET Reliability in IKIRK Region
Author
O´Donovan, Vicky ; Deignan, Anne ; Moloney, Keith ; Daly, Paul ; Doyle, Denis ; Molyneaux, James
Author_Institution
Analog Devices, Limerick
Volume
7
Issue
1
fYear
2007
fDate
3/1/2007 12:00:00 AM
Firstpage
197
Lastpage
199
Abstract
This paper evaluates the hot-carrier performance of the n-channel high-voltage (30 V) MOSFET device. This device is widely used in high-voltage linear products. It can withstand 30 V across any two terminals. This large voltage range requires thorough hot-carrier analysis, investigating potential hot-carrier mechanisms not believed to have been previously explored in the literature. It is established that two different hot-carrier generation mechanisms are occurring: one at ISUB(max) and another at IKIRK. These are investigated through combined device parametric, technology computer-aided design (TCAD) simulation, and hot-carrier reliability data.
Keywords
MOSFET; hot carriers; semiconductor device reliability; technology CAD (electronics); IKIRK region; MOSFET reliability; hot-carrier mechanisms; n-channel high-voltage MOSFET device; technology computer-aided design; voltage 30 V; CMOS technology; Degradation; Design automation; Doping; Hot carriers; Kirk field collapse effect; MOSFET circuits; Stress measurement; Time measurement; Voltage; Degradation mechanism; device optimization; hot carrier;
fLanguage
English
Journal_Title
Device and Materials Reliability, IEEE Transactions on
Publisher
ieee
ISSN
1530-4388
Type
jour
DOI
10.1109/TDMR.2007.891532
Filename
4271504
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