Polarization-insensitive, monolithic 4 x 4 InGaAsP-InP laser amplifier gate switch matrix

Author

Van Berlo, Wim ; Janson, Mats ; Lundgren, Lena ; Mörner, Ann-Caroline ; Terlecki, Jerzy ; Gustavsson, Mats ; Granestrand, Per ; Svensson, Per

Author_Institution

Opto & Microwave Electron. Div., Ericsson Components AB, Stockholm, Sweden

Volume

7

Issue

11

fYear

1995

Firstpage

1291

Lastpage

1293

Abstract

Monolithically integrated 4/spl times/4 semiconductor laser amplifier gate switch arrays comprising twenty-four integrated laser amplifiers have been designed, fabricated, and evaluated. Low fiber-to-fiber loss, low polarization dependence, high extinction ratio, and low crosstalk are reported.<>

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; light polarisation; optical crosstalk; optical fibre losses; optical switches; semiconductor laser arrays; semiconductor lasers; semiconductor switches; 4/spl times/4 semiconductor laser amplifier; high extinction ratio; integrated laser amplifiers; laser amplifier gate switch arrays; laser amplifier gate switch matrix; laser fabrication; low crosstalk; low fiber-to-fiber loss; low polarization dependence; monolithic 4/spl times/4 InGaAsP-InP laser amplifier; monolithically integrated; polarization-insensitive; Fiber lasers; Laser feedback; Optical amplifiers; Optical fiber polarization; Optical switches; Optical waveguides; Power semiconductor switches; Semiconductor laser arrays; Semiconductor optical amplifiers; Transmission line matrix methods;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.473475

Filename

473475