DocumentCode

1054506

Title

I-5 laser operation between 0.9 and 1.1 µm with GaAs1-xSbxdouble heterostructures

Author

Nahory, R.E. ; Pollack, M.A.

Volume

23

Issue

11

fYear

1976

fDate

11/1/1976 12:00:00 AM

Firstpage

1248

Lastpage

1248

Keywords

DH-HEMTs; Epitaxial growth; Gallium arsenide; Gas lasers; Indium phosphide; Laser tuning; Optical materials; Optical pulses; Temperature; Threshold current;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1976.18589

Filename

1478602