Modified emission of semiconductor nano-dots in three-dimensional photonic crystals

Author

Khokhar, A.Z. ; De La Rue, R.M. ; Johnson, N.P.

Author_Institution

Dept. of Electron. & Electr. Eng., Univ. of Glasgow, Glasgow

Volume

1

Issue

3

fYear

2007

fDate

6/1/2007 12:00:00 AM

Firstpage

210

Lastpage

214

Abstract

Mono-dispersed polystyrene spheres were used to grow synthetic opal photonic crystals on glass substrates using controlled evaporation. Commercially available cadmium telluride (CdTe) semiconductor nano-dots with emission in the visible were infiltrated into a slice of opal voids by capillary action. The optical properties of CdTe dot loaded opal were studied by using a white light source and showed a red shift of the opal stop-band due to an increase in the effective refractive index. The emission of the CdTe dots was matched with the edge of the (111) direction stop-band of bare opal. Stop-band confined emission from CdTe dots was observed by pumping with an argon-ion laser. The full width at half maximum of the CdTe emission from an infiltrated section of the opal was significantly reduced due to the stop-band effect of bare opal.

Keywords

II-VI semiconductors; cadmium compounds; optical pumping; photoluminescence; photonic crystals; red shift; refractive index; semiconductor quantum dots; (111) direction stop-band; CdTe; argon-ion laser; cadmium telluride semiconductor nanodots; capillary action; controlled evaporation growth; effective refractive index; full width at half maximum; glass substrates; monodispersed polystyrene spheres; opal voids; optical properties; optical pumping; red shift; stop-band confined emission; synthetic opal photonic crystals; three-dimensional photonic crystals; visible emission spectra; white light source;

fLanguage

English

Journal_Title

Circuits, Devices & Systems, IET

Publisher

iet

ISSN

1751-858X

Type

jour

DOI

10.1049/iet-cds:20060295

Filename

4273061