DocumentCode
1055499
Title
Electron traps on high-temperature oxidized SIMOX buried oxides
Author
Lawrence, Reed K. ; Ioannou, Dimitris E.
Author_Institution
ARACOR, Washington, DC, USA
Volume
17
Issue
7
fYear
1996
fDate
7/1/1996 12:00:00 AM
Firstpage
341
Lastpage
343
Abstract
Photo-injection was used to study the charge trapping properties of high-temperature oxidation (HITOX) SIMOX buried oxides (BOX), provided by two independent vendors. After electron injection, from a 5 eV mercury light source, the electron trapping per area for both HITOX material sources was found to be larger than their respective standard (control) separation by implantation of oxygen (SIMOX) structures. This increase has been attributed to the HITOX´s process influence on the formation of the HITOX/BOX oxide.
Keywords
SIMOX; buried layers; electron traps; oxidation; SIMOX buried oxides; Si; charge trapping properties; electron injection; electron trapping; high-temperature oxidation; photo-injection; Annealing; Atomic force microscopy; Electron traps; High speed integrated circuits; Light sources; Lighting control; Oxidation; Research and development; Semiconductor films; Silicon;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.506361
Filename
506361
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