Integration of GalnP/GaAs heterojunction bipolar transistors and high electron mobility transistors

Author

Yang, Y.F. ; Hsu, C.C. ; Yang, E.S.

Author_Institution

Dept. of Electr. Eng., Columbia Univ., New York, NY, USA

Volume

17

Issue

7

fYear

1996

fDate

7/1/1996 12:00:00 AM

Firstpage

363

Lastpage

365

Abstract

Integration of carbon-doped GaInP/GaAs heterojunction bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) is demonstrated by growing an HBT on the top of a HEMT. A current gain of 60, a cutoff frequency of 59 GHz and a maximum oscillation frequency of 68 GHz were obtained for a 5×15 μm² self-aligned HBT. The HEMT, with a gate length of 1.5 μm has a transconductance of 210 mS/mm, a cutoff frequency of 9 GHz and a maximum oscillation frequency of 22 GHz. It is shown that the GaInP/GaAs HBT on the HEMT is a simple Bi-FET technology suitable for microwave and mixed signal applications.

Keywords

III-V semiconductors; MMIC; gallium arsenide; gallium compounds; heterojunction bipolar transistors; high electron mobility transistors; indium compounds; integrated circuit technology; mixed analogue-digital integrated circuits; monolithic integrated circuits; 1.5 micron; 210 mS/mm; 9 to 68 GHz; BiFET technology; GaInP-GaAs:C; HBT/HEMT integration; heterojunction bipolar transistors; high electron mobility transistors; microwave applications; mixed signal applications; self-aligned HBT; Cutoff frequency; Epitaxial layers; Etching; Gallium arsenide; HEMTs; Heterojunction bipolar transistors; MOCVD; MODFETs; Microwave FETs; Substrates;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.506368

Filename

506368