DocumentCode
1055632
Title
EPROM high-speed erasing scheme
Author
McNeil, J.R. ; Collins, G.J.
Volume
24
Issue
2
fYear
1977
fDate
2/1/1977 12:00:00 AM
Firstpage
159
Lastpage
159
Abstract
We report a technique for erasing an EPROM using the output from a Cu II laser at 2600 Å. By focusing the laser output on a portion of the chip, reliable erasure of a selected number of memory locations is obtained with an exposure time of approximately 35 ms. With the entire chip illuminated by the unfocused laser output, all memory locations are erased after an exposure time of several seconds. This method affords both high-speed and selective erasure of EPROM memory locations.
Keywords
EPROM; Lamps; Laser modes; Mercury (metals); Optical pulses; Power lasers; Pulsed power supplies; Semiconductor lasers; Space vector pulse width modulation; Spatial resolution;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1977.18697
Filename
1478889
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