• DocumentCode
    1055747
  • Title

    Double boron implant short-channel MOSFET

  • Author

    Wang, Peng Peng ; Wang, Paul P.

  • Author_Institution
    IBM Corporation, Kingston, NY
  • Volume
    24
  • Issue
    3
  • fYear
    1977
  • fDate
    3/1/1977 12:00:00 AM
  • Firstpage
    196
  • Lastpage
    204
  • Abstract
    Threshold voltage and current-voltage characteristics are presented for a double boron-ion-implanted-n-channel enhancement MOSFET device for high speed logic circuit applications. A 15-Ω. cm-high resistivity p-type
  • Keywords
    Boron; Capacitance; Conductivity; Doping profiles; Implants; Ion implantation; MOSFET circuits; Performance analysis; Substrates; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1977.18709
  • Filename
    1478901
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1055747