A Breakdown Voltage Multiplier for High Voltage Swing Drivers

Author

Mandegaran, Sam ; Hajimiri, Ali

Author_Institution

California Inst. of Technol., Pasadena, CA

Volume

42

Issue

2

fYear

2007

Firstpage

302

Lastpage

312

Abstract

A novel breakdown voltage (BV) multiplier is introduced that makes it possible to generate high output voltage swings using transistors with low breakdown voltages. The timing analysis of the stage is used to optimize its dynamic response. A 10 Gb/s optical modulator driver with a differential output voltage swing of 8V on a 50 Omega load was implemented in a SiGe BiCMOS process. It uses the BV-Doubler topology to achieve output swings twice the collector-emitter breakdown voltage without stressing any single transistor

Keywords

BiCMOS integrated circuits; Ge-Si alloys; driver circuits; optical modulation; voltage multipliers; 10 Gbit/s; 50 ohm; 8 V; BV-doubler topology; BiCMOS process; SiGe; breakdown voltage multiplier; collector-emitter breakdown voltage; high voltage swing drivers; optical modulator driver; timing analysis; Breakdown voltage; Circuit topology; Costs; Driver circuits; Germanium silicon alloys; High speed optical techniques; Optical modulation; Silicon germanium; Switches; Timing; BV-Doubler; BV-multiplier; Breakdown voltage (BV); SiGe; breakdown voltage doubler; breakdown voltage multiplier; driver; optical modulator driver;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2006.889390

Filename

4077167