• DocumentCode
    1056292
  • Title

    InP—CdS solar cells

  • Author

    Shay, Joseph L. ; Wagner, Sigurd ; Bettini, Manfred ; Bachmann, Klaus J. ; Buehler, Ernest

  • Author_Institution
    Bell Telephone Laboratories, Holmdel, NJ
  • Volume
    24
  • Issue
    4
  • fYear
    1977
  • fDate
    4/1/1977 12:00:00 AM
  • Firstpage
    483
  • Lastpage
    486
  • Abstract
    We report single crystal InP-CdS solar cells having AM2 efficiencies of 15 percent and polycrystalline thin-film cells having AM2 efficiencies of 5.7 percent. Basic studies of the interface reveal that the thin-film efficiency is presently limited at least in part by the quality of the InP within the grains, and not exclusively by interface phenomena intrinsic to a polycrystalline cell. Preliminary accelerated life tests indicate a remarkable insensitivity of these unencapsulated cells to the ambient.
  • Keywords
    Chemical vapor deposition; Heterojunctions; Indium phosphide; Interface phenomena; Photonic band gap; Photovoltaic cells; Photovoltaic systems; Solar power generation; Substrates; Transistors;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1977.18763
  • Filename
    1478955
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1056292