DocumentCode
1056312
Title
Automatic Substrate Switching Circuit for On-Chip Adaptive Power-Supply System
Author
Ma, Dongsheng
Author_Institution
Univ. of Arizona, Tucson
Volume
54
Issue
7
fYear
2007
fDate
7/1/2007 12:00:00 AM
Firstpage
641
Lastpage
645
Abstract
In energy-aggressive dynamic voltage scaling techniques, adaptive on-chip power supply, which can provide variable voltage in a wide range, is highly demanded. However, potential leakage and latch-up problems arise, when the substrate biasing voltages of the transistors vary with the supply voltage. An automatic substrate switching circuit (ASSC) is thus presented in this paper, with accurate voltage comparison, fast transient response and small silicon area. Experimental results show that the circuit automatically and accurately switches 1.3-nF pMOS substrate at a switching speed of 1.1 V/mus, with a switching voltage range of 1.1 to 3.3 V. The tracking error in steady state is below 18 mV. Fabricated in a standard 0.35-mum n-well digital CMOS process, the ASSC circuit only requires 0.017 mm 2 silicon areas, with a maximum static power of 116 muW.
Keywords
CMOS digital integrated circuits; power supply circuits; silicon; switching circuits; adaptive on-chip power supply; automatic substrate switching circuit; capacitance 1.3 nF; digital CMOS process; dynamic voltage scaling; fast transient response; pMOS substrate; size 0.35 mum; small silicon area; substrate biasing voltages; transistors; voltage 1.1 V to 3.3 V; Adaptive systems; CMOS process; Dynamic voltage scaling; Power supplies; Silicon; Steady-state; Switches; Switching circuits; System-on-a-chip; Transient response; Step-up/down switching dc–dc converter; substrate biasing; substrate switching;
fLanguage
English
Journal_Title
Circuits and Systems II: Express Briefs, IEEE Transactions on
Publisher
ieee
ISSN
1549-7747
Type
jour
DOI
10.1109/TCSII.2007.896793
Filename
4273641
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