DocumentCode
1056509
Title
The GaAs P-N-P-N laser diode
Author
Lockwood, H.F. ; Etzold, K.-F. ; Stockton, T.E. ; Marinelli, D.P.
Author_Institution
RCA Laboratories, Princeton, N.J, Usa
Volume
10
Issue
7
fYear
1974
fDate
7/1/1974 12:00:00 AM
Firstpage
567
Lastpage
569
Abstract
The general structure of double-heterojunction diode lasers is shown to be consistent with the required geometry of the Shockley diode or p-n-p-n switch. When the two devices are combined in a single structure, there results an extremely simple source of high optical power (>0.5-W) pulses of very short duration (<10 ns) without the need for a complex external driver. In principle, pulse triggering and repetition rate are easily controlled, suggesting that the device has potential application in pulse-coded optical communication systems.
Keywords
Communication system control; Control systems; Diode lasers; Gallium arsenide; Geometrical optics; Optical control; Optical devices; Optical pulses; Optical switches; Ultraviolet sources;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1974.1068200
Filename
1068200
Link To Document